English
The Boltzmann tyranny, set by hot electron statistics data, specifies a lower limit of 60 mV/dec for the switching slope (SS) of MOSFETs, which is a fundamental obstacle for low dissipation electronic devices. A large S S can lead to voltage non scalability, severe leakage, and increased power consumption, especially on short channels, making transistor scaling a daunting challenge. In recent decades, a series of steep slope transistors have been proposed; There is no ideal switch that is close to a sudden switch between binary logic states (SS ∼ 0 mV/dec). We demonstrate a FET based on a fully two-dimensional material van der Waals heterostructure (vdW), which has ultra steep switching (0.33 mV/dec), high on/off current ratio (∼ 107), and ultra-low off current (~0.1 pA). The "sub threshold free" operation achieved through the collective behavior of functional materials enables FET to directly switch from off state to on state, completely eliminating the sub threshold region and acting as an ideal logic switch. Showcased the manufacturing of 2-inch wafer level devices. Driven by device innovation and emerging materials, this research has made progress in achieving "beyond Boltzmann" transistors, overcoming one of the most notorious technical barriers in CMOS electronic products that has plagued the research community for decades.
