MoS2/TiS3 Titanium Trisulfide Molybdenum Disulfide Heterojunction

Details

Substrate: 300nm oxide layer silicon wafer, 5um equidistant gold electrode

Structure: First peel the single layer MoS2 to the designated position, and then transfer a few layers of TiS3 titanium trisulfide to the MoS2 position to form MOS2-TIS3 / MOS2-TIS3 three regions. The FET properties can be tested for two separate materials and heterojunctions respectively.