CVD Method Silica Substrate Monolayer Graphene Film

Details

Product name: CVD method silica substrate single layer graphene film

Product Properties

Film color: colorless and transparent

Product brand: JCGRFSIO

Square resistance: Single layer A 300-600Ω /□ Single layer B 700-1500Ω /□ Less layer 500-1200Ω/□

The number of layers of the graphene film is single layer or less (less than 10 layers). The film has high integrity, high single-layer coverage, good electrical conductivity, and mobility up to ~ 6000cm2/vs.

Graphene is transferred to silicon oxide wafers, customers can also provide their own silicon oxide wafers, we transfer.

Silicon oxide parameters:

Type: P type heavily doped (R:3 x 10-3Ωcm)

Thickness: 525±20μm

Oxide layer thickness: 300nm

Max. 7cm*7cm (can be embedded with 4-inch silica substrate or full rotation)

This product should be sealed and stored in a dry environment, and the temperature is below 35℃. Contact with volatile substances and pollution sources is strictly prohibited. Keep away from fire sources.

Note: Grade A single-layer coverage is greater than 97%, grade B single-layer coverage is greater than 85%, less than 10 layers of graphene thickness, can provide customized service