Copper based 500um graphene single crystal

More details

For background:

At present, the methods of preparing high-quality graphene include tape stripping, silicon carbide or metal surface epitaxial growth and chemical vapor deposition (CVD), the first two methods are low efficiency and not suitable for large quantities of preparation. So far, graphene prepared by the CVD method is generally a polycrystalline material composed of graphene crystal domains of nanometer to micron size.

Graphene's excellent electrical, optical, strength and many other excellent properties make it have important potential applications in electronics, spintronics, optoelectronics, solar cells, sensors and other fields, but large-scale high-quality preparation technology is one of the bottlenecks restricting its entry into practical applications.

After a long time of technical research, the Beike nanotechnology team has successfully prepared 100μm to several millimeter-level hexagonal monocrystalline graphene and its graphene film by atmospheric pressure CVD method with low concentration of methane and high concentration of hydrogen on a common copper substrate without expensive metal matrix. Moreover, it can be transferred to any substrate for easy access.

The single crystal graphene transferred by this method has a high quality, and it is transferred to the Si/SiO2 substrate to make the field effect transistor. The measurement shows that the carrier mobility of the single crystal graphene can reach 7100cm2V-1s-1 at room temperature.

The breakthrough in the technology of growing large-size single crystal graphene and its thin films on the common copper matrix has laid a material foundation for the research of the basic physical properties of graphene and its practical application in the fields of high-performance nanoelectronic devices and transparent conductive films.